VISHAY SQJ992EP-T2_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ992EP-T2_GE3

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Specifications

Current - Continuous Drain(Id)15A
Pd - Power Dissipation11W
RDS(on)125.4mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)33pF
Number2 N-Channel
Input Capacitance(Ciss)446pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)83pF

Technical details

15A 11W 125.4mΩ@10V 2.5V 2 N-Channel FET, MOSFET Arrays RoHS

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