VISHAY · FETs & Power MOSFETs · MPN SQJ992EP-T1_GE3
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| Current - Continuous Drain(Id) | 15A |
|---|---|
| Pd - Power Dissipation | 11W |
| RDS(on) | 74.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 446pF |
| Gate Charge(Qg) | 12nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 83pF |
15A 11W 74.5mΩ@4.5V 2.5V 2 N-Channel FET, MOSFET Arrays RoHS