VISHAY SQJ990EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ990EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)-
RDS(on)-
Pd - Power Dissipation9W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)18pF
Number2 N-Channel
Input Capacitance(Ciss)475pF
Gate Charge(Qg)10nC@10V
Operating Temperature-55℃~+175℃

Technical details

9W 2V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS

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