VISHAY SQJ963EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ963EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)8A
RDS(on)115mΩ@4.5V
Pd - Power Dissipation27W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)75pF
Number2 P-Channel
Input Capacitance(Ciss)1.14nF
Gate Charge(Qg)40nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)125pF

Technical details

8A 115mΩ@4.5V 27W 2.5V 2 P-Channel SO-8L FET, MOSFET Arrays RoHS

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