VISHAY · FETs & Power MOSFETs · MPN SQJ958EP-T1_GE3
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| RDS(on) | 34.9mΩ@10V |
| Pd - Power Dissipation | 35W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.075nF |
| Gate Charge(Qg) | 23nC@10V |
| Operating Temperature | -55℃~+175℃ |
20A 34.9mΩ@10V 35W 2.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS