VISHAY · FETs & Power MOSFETs · MPN SQJ956EP-T1_GE3
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| Current - Continuous Drain(Id) | 23A |
|---|---|
| RDS(on) | - |
| Pd - Power Dissipation | 34W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.395nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+175℃ |
23A 34W 2.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS