VISHAY SQJ952EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ952EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)23A
RDS(on)24mΩ@4.5V
Pd - Power Dissipation25W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)66pF
Number2 N-Channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)30nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)156pF

Technical details

N-Channel Array 60V 23A 25W PowerPAKSO-8L

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