VISHAY SQJ951EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ951EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation56W
RDS(on)17mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)305pF
Number2 P-Channel
Input Capacitance(Ciss)1.68nF
Gate Charge(Qg)50nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)415pF

Technical details

P-Channel 30V 30A 56W PowerPAKSO-8L

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