VISHAY SQJ951EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ951EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation-
RDS(on)36mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)305pF
Number2 P-Channel
Input Capacitance(Ciss)1.345nF
Gate Charge(Qg)50nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.68nF

Technical details

30A 36mΩ@4.5V 2.5V 2 P-Channel PowerPAK-SO-8-Dual FET, MOSFET Arrays RoHS

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