VISHAY SQJ942EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ942EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)-
RDS(on)22mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))1.3V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

22mΩ@10V 1.3V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS

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