VISHAY · FETs & Power MOSFETs · MPN SQJ940EP-T1_GE3
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| Current - Continuous Drain(Id) | 18A |
|---|---|
| RDS(on) | 16mΩ@10V |
| Pd - Power Dissipation | 43W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Reverse Transfer Capacitance (Crss@Vds) | 123pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.313nF |
| Gate Charge(Qg) | 48nC@10V |
| Operating Temperature | -55℃~+175℃ |
18A 16mΩ@10V 43W 2.5V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS