VISHAY SQJ914EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ914EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)17mΩ@4.5V
Pd - Power Dissipation9W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)80pF
Number2 N-Channel
Input Capacitance(Ciss)1.11nF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)220pF

Technical details

30A 17mΩ@4.5V 9W 2.5V 2 N-Channel FET, MOSFET Arrays RoHS

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