VISHAY SQJ912BEP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ912BEP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)11mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)110pF
Number2 N-Channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)60nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)195pF

Technical details

N-Channel Array 40V 30A 48W PowerPAKSO-8L

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