VISHAY SQJ912AEP-T2_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ912AEP-T2_BE3

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)9.3mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.835nF

Technical details

40V 30A 2.5V 9.3mΩ@10V 2 N-Channel PowerPAK-SO-8-Dual Single FETs, MOSFETs RoHS

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