VISHAY SQJ910AEP-T2_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ910AEP-T2_GE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)7mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)158pF
Number2 N-Channel
Input Capacitance(Ciss)1.869nF
Gate Charge(Qg)39nC@10V
Operating Temperature-55℃~+175℃

Technical details

30A 7mΩ@10V 48W 2.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS

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