VISHAY · FETs & Power MOSFETs · MPN SQJ886EP-T1_GE3
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 356pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 184pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.922nF |
| Type | N-Channel |
N-Channel 40V 60A 55W SO-8-4