VISHAY SQJ872EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ872EP-T1_GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)504pF
Current - Continuous Drain(Id)24.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)35.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.045nF
TypeN-Channel

Technical details

N-Channel 150V 24.5A 55W PowerPAKSO-8L

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