VISHAY SQJ860EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ860EP-T1_BE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

40V 60A 2V 48W 6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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