VISHAY · FETs & Power MOSFETs · MPN SQJ858EP-T1_GE3
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
40V 75A 2.5V 68W 6mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS