VISHAY SQJ844AEP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ844AEP-T1_GE3

No reviews yet — be the first to review VISHAY SQJ844AEP-T1_GE3.

Specifications

Current - Continuous Drain(Id)8A
RDS(on)16.6mΩ@10V;27.6mΩ@4.5V
Pd - Power Dissipation16W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)93pF
Number2 N-Channel
Input Capacitance(Ciss)929pF
Gate Charge(Qg)17nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)280pF

Technical details

N-Channel Array 30V 8A 16W PowerPAKSO-8L

Related FETs & Power MOSFETs