VISHAY · FETs & Power MOSFETs · MPN SQJ840EP-T1_GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 13.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
30V 30A 2.2V 46W 13.8mΩ@4.5V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS