VISHAY SQJ570EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ570EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)15A
RDS(on)146mΩ@10V
Pd - Power Dissipation27W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage100V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)650pF
Gate Charge(Qg)20nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)260pF;250pF

Technical details

N-Channel+P-Channel Array 100V 15A 27W Surface Mount PowerPAK-SO-8L

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