VISHAY SQJ560EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ560EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation34W
RDS(on)107.2mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)150pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.205nF
Gate Charge(Qg)45nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)800pF

Technical details

N-Channel+P-Channel Array 60V 30A 34W PowerPAKSO-8L

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