VISHAY SQJ560EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ560EP-T1_BE3

No reviews yet — be the first to review VISHAY SQJ560EP-T1_BE3.

Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation34W
RDS(on)107.2mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)102pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.205nF
Gate Charge(Qg)45nC@10V
Operating Temperature-
Output Capacitance(Coss)560pF

Technical details

30A 34W 107.2mΩ@10V 2.5V 1 N-Channel + 1 P-Channel FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs