VISHAY SQJ504EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ504EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation34W
RDS(on)17mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)300pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)4.6nF
Gate Charge(Qg)85nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)320pF

Technical details

30A 34W 17mΩ@10V 2.5V 1 N-Channel + 1 P-Channel FET, MOSFET Arrays RoHS

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