VISHAY SQJ500AEP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ500AEP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation48W
RDS(on)9.2mΩ@10V
Gate Threshold Voltage (Vgs(th))2.3V
Drain to Source Voltage40V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)193pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.843nF
Gate Charge(Qg)38.3nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)278pF

Technical details

N-Channel+P-Channel Array 40V 30A 48W Surface Mount PowerPAK-SO-8-Dual

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