VISHAY SQJ500AEP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ500AEP-T1_BE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation48W
RDS(on)9.2mΩ@10V
Gate Threshold Voltage (Vgs(th))2.3V
Drain to Source Voltage40V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)111pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.843nF
Gate Charge(Qg)38.3nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)273pF

Technical details

30A 48W 9.2mΩ@10V 2.3V 1 N-Channel + 1 P-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS

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