VISHAY · FETs & Power MOSFETs · MPN SQJ488EP-T2_BE3
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 42A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 978pF |
100V 42A 2.5V 83W 21mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS