VISHAY SQJ488EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ488EP-T1_GE3

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)27nC
Output Capacitance(Coss)462pF
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)25.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)978pF
TypeN-Channel

Technical details

N-Channel 100V 42A 83W PowerPAKSO-8L

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