VISHAY · FETs & Power MOSFETs · MPN SQJ486EP-T1_BE3
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.386nF |
75V 30A 2.1V 56W 26mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS