VISHAY SQJ479EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ479EP-T1_GE3

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Specifications

Configuration-
Gate Charge(Qg)150nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)67mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.5nF

Technical details

P-Channel 80V 32A 68W PowerPAKSO-8L

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