VISHAY SQJ476EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ476EP-T1_GE3

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)275pF
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 100V 23A 45W PowerPAKSO-8L

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