VISHAY SQJ474EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ474EP-T1_GE3

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Specifications

Output Capacitance(Coss)397pF
Pd - Power Dissipation45W
Configuration-
Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

45W 100V 26A 2.5V 35mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS

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