VISHAY SQJ464EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ464EP-T1_BE3

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)74pF
Number1 N-channel
Input Capacitance(Ciss)2.086nF

Technical details

60V 32A 2.5V 45W 17mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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