VISHAY SQJ461EP-T2_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ461EP-T2_GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)140nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)16mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.71nF

Technical details

60V 30A 2.5V 83W 16mΩ@10V 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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