VISHAY · FETs & Power MOSFETs · MPN SQJ460AEP-T1_GE3
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| Gate Charge(Qg) | 106nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 235pF |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.795nF |
60V 32A 2V 83W 9.6mΩ@10V 1 N-channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS