VISHAY · FETs & Power MOSFETs · MPN SQJ459EP-T2_GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 108nC@10V |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 312pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.586nF |
60V 52A 2V 83W 18mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS