VISHAY SQJ459EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ459EP-T1_GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)108nC@10V
Output Capacitance(Coss)497pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)312pF
RDS(on)18mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.586nF
TypeP-Channel

Technical details

P-Channel 60V 52A 27W PowerPAKSO-8L

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