VISHAY SQJ457EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ457EP-T1_GE3

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation22W
Reverse Transfer Capacitance (Crss@Vds)275pF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.4nF
TypeP-Channel

Technical details

P-Channel 60V 36A 22W PowerPAKSO-8L

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