VISHAY · FETs & Power MOSFETs · MPN SQJ456EP-T1_GE3
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 133pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.342nF |
100V 32A 3.5V 83W 26mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS