VISHAY SQJ446EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ446EP-T1_GE3

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)232pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)4.22nF

Technical details

40V 60A 2.5V 15W 1 N-channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS

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