VISHAY SQJ444EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ444EP-T1_GE3

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)3.05nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation22W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)4.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5nF
TypeN-Channel

Technical details

N-Channel 40V 60A 22W Surface Mount PowerPAK-SO-8

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