VISHAY · FETs & Power MOSFETs · MPN SQJ444EP-T1_BE3
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 22W |
| RDS(on) | 3.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
40V 60A 2.5V 22W 3.2mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS