VISHAY SQJ433EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ433EP-T1_GE3

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Specifications

Gate Charge(Qg)108nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)775pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)695pF
RDS(on)8.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.877nF
TypeP-Channel

Technical details

P-Channel 30V 75A 83W PowerPAKSO-8L

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