VISHAY SQJ433EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ433EP-T1_BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)108nC@10V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation83W
RDS(on)8.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)695pF
Number1 P-Channel
Input Capacitance(Ciss)4.877nF

Technical details

30V 75A 2V 83W 8.1mΩ@10V 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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