VISHAY SQJ431EP-T2_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ431EP-T2_GE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)106nC@10V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)221mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)4.355nF
TypeP-Channel

Technical details

200V 12A 2.5V 83W 221mΩ@6V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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