VISHAY SQJ431EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ431EP-T1_GE3

No reviews yet — be the first to review VISHAY SQJ431EP-T1_GE3.

Specifications

Gate Charge(Qg)106nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)221mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)4.355nF
TypeP-Channel

Technical details

P-Channel 200V 12A 83W Surface Mount PowerPAK-SO-8

Related FETs & Power MOSFETs