VISHAY SQJ431AEP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ431AEP-T1_GE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)85nC@10V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)9.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)305mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF
TypeP-Channel

Technical details

P-Channel 200V 9.4A 68W PowerPAKSO-8L

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