VISHAY SQJ431AEP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJ431AEP-T1_BE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)9.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)305mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF

Technical details

200V 9.4A 3V 68W 305mΩ@10V 1 P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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