VISHAY SQJ422EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJ422EP-T1_GE3

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)691pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)278pF
RDS(on)4.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.66nF
TypeN-Channel

Technical details

N-Channel 40V 75A 105W PowerPAKSO-8L

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